1.3-μm GaInNAs-AlGaAs distributed feedback lasers

被引：41
|
作者：
Reinhardt, M [1 ]
Fischer, M [1 ]
Kamp, M [1 ]
Hofmann, J [1 ]
Forchel, A [1 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 03期
关键词：
distributed feedback (DFB) lasers; gain coupling; GaInNAs; optical fiber communications; semiconductor lasers;
D O I：
10.1109/68.826900
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room temperature continuous-wave operation of 1.3-mu m single-mode GaInNAs-AlGaAs distributed feedback (DFB)-lasers has been realized, The laser structure has been grown by solid source molecular beam epitaxy (MBE) using an electron cyclotron resonance plasma source for nitrogen activation (ECR-MBE). Laterally to the laser ridge a metal grating is patterned in order to obtain DFB, The evanescent field of the laser mode couples to the grating resulting in single-mode DFB emission. The continuous wave threshold currents are around 120 mA for a cavity with 800-mu m length and 2 mu m width, Monomode emission with side-mode suppression ratios of nearly 40 dB have been obtained.
引用
收藏
页码：239 / 241
页数：3
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