Electrical properties of p-type ZnTe thin films by immersion in Cu solution

ZnTe thin films were deposited on SiO2 substrate by pulsed-laser deposition (PLD) at room temperature. The ZnTe films were immersed in different concentrations of Cu(NO3)(2)-3H(2)O solutions for 1 min, then heated at 200 and 300 degrees C, both temperatures for 10 min in a N-2 atmosphere. The X-ray diffraction (XRD) showed the hexagonal and orthorhombic ZnTe phases when the copper-doped films were heated at 200 and 300 degrees C for 10 min respectively. The films immersed in 15 and 60 mg of Cu(NO3)(2)-H2O solutions had similar values of sheet resistance similar to 10(4) Omega/square, resistivity similar to 10(-1) Omega cm, specific contact resistance similar to 10(-4) Omega cm(2), and hall mobility 5 cm(2)/V s. Also, the copper-doped conditions were used to dope the source and drain bias to make a thin-film transistor of ZnTe (TFT) by photolithography. (C) 2014 Elsevier BM. All rights reserved.