Threshold voltage of sub-10-nm-thick SOI MOSFET's at cryogenic temperature and quantum effects

被引：3
|
作者：
Omura, Y [1 ]
Nakakubo, A [1 ]
Nakatsuji, H [1 ]
机构：
[1] Kansai Univ, Fac Engn, Suita, Osaka 564, Japan
来源：
2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/SOI.2004.1391552
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：53 / 54
页数：2
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