Current-Oscillation Power Growth in a Semiconductor Superlattice with Regard to Interminiband Tunneling

被引：2
|
作者：
Sel'skii, A. O. [1 ]
机构：
[1] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
GENERATION;
D O I：
10.1134/S1063785018050115
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The total power of oscillations of current flowing through a semiconductor superlattice with different gaps between the first and second minibands is discussed. It is demonstrated that, with a decrease in the band gap, i.e., with an increase in the probability of interminiband tunneling, the total current-oscillation power increases when certain voltages are applied to the superlattice.
引用
收藏
页码：388 / 391
页数：4
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