Tunable electrical properties of NiO thin films and p-type thin-film transistors

被引：48
|
作者：
Chen, Yongyue [1 ]
Sun, Yajie [1 ]
Dai, Xusheng [1 ]
Zhang, Bingpo [1 ]
Ye, Zhenyu [1 ]
Wang, Miao [1 ]
Wu, Huizhen [1 ]
机构：
[1] Zhejiang Univ, Dept Phys, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
THIN SOLID FILMS | 2015年 / 592卷
基金：
中国国家自然科学基金;
关键词：
Sputtering; Electrical properties; Thin film transistor; NiO; TRANSPARENT OXIDE SEMICONDUCTORS; TEMPERATURE; FABRICATION;
D O I：
10.1016/j.tsf.2015.09.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Oxide p-type transistors are expected in realization of complementary circuits. Here, amorphous p-type NiO thin films were deposited on glass substrates by radio frequency (rf) sputtering at various growth temperatures and O-2/Ar flowratios. The influence of growth temperature and O-2/Ar flow ratio on the structural and electrical properties of amorphous NiO thin films has been systematically investigated by means of characterizations from X-ray diffraction, UV-vis spectroscopy, and electrical measurements. Pure Ar ambient with room temperature (RT) growth of NiO films shows the highest mobility of 1.07 cm(2)/Vs, and hole concentration of 2.78 x 10(17) cm(-3). Initial p-type NiO-based thin film transistors grown by magnetron sputtering demonstrated a mobility of 0.05 cm(2)/Vs, a threshold voltage (Vth) of -8.6 V, subthreshold swing (S) of 2.6 V/dec, the current on-off ratio of 10(3), respectively. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：195 / 199
页数：5
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