A High-efficiency High-power-density 1MHz LLC Converter with GaN Devices and Integrated Transformer

被引：0

作者：

Chen, Runruo ^{[1
]}

Yu, Sheng-yang ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

THIRTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2018) | 2018年

关键词：

GaN; LLC; resonant converter; high frequency; high power density; integrated transformer; RESONANT CONVERTER; MATRIX TRANSFORMER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a design of a high-efficiency LLC converter with power density >140W/in(3) . Gallium Nitride (GaN) FETs are adopted in this design to minimize the required transformer size for 1MHz operation. To further reduce the magnetic losses and size, a new integrated transformer is proposed in this paper. The proposed integrated transformer uses "infinity" winding structure to reduce the required magnetic effect area. Synchronous rectifier (SR) FETs and output capacitors are integrated with output windings in order to minimize the AC termination losses. The parasitic effect for high frequency LLC converter design is also analyzed in details. An unregulated 1kW LLC resonant converter prototype is designed and tested with a peak efficiency of 97.6%.

引用

页码：791 / 796

页数：6

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