Growth of GaN Nanotubes and Nanowires on Au-Ni Catalysts

被引：1
|
作者：
Sibirev, N. V. [1 ,2 ]
Huang, H. [3 ]
Ubyivovk, E. V. [1 ,2 ]
Lv, R. [3 ]
Zhao, D. [3 ]
Guang, Q. [3 ]
Berdnikov, Yu S. [2 ]
Yan, X. [4 ]
Koryakin, A. A. [2 ]
Shtrom, I. V. [1 ,5 ]
机构：
[1] St Petersburg State Univ, St Petersburg 199034, Russia
[2] St Petersburg Natl Univ Informat Technol Mech & O, St Petersburg 197101, Russia
[3] Dalian Univ Technol, Dalian 116024, Peoples R China
[4] Beijing Univ Posts & Telecommun, Beijing 100876, Peoples R China
[5] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198095, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
NANOSTRUCTURES;
D O I：
10.1134/S1063785019020329
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold-nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in the presence of various Au-Ni catalyst compositions is explained. It is established that NTs grow on solid catalyst particles, while NWs grow according to the classical vapor-liquid-solid mechanism. The optoelectronic properties of obtained NTs and NWs have been studied using photo- and cathodoluminescence techniques.
引用
收藏
页码：159 / 162
页数：4
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