Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates

被引：42
|
作者：
Li, W
Ni, WX
机构：
[1] Department of Physics and Measurement Technology, Linköping University
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 19期
关键词：
D O I：
10.1063/1.116315
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-resolution multiple-crystal reflection diffractometer was used to determine the residual strain in GaN epilayers grown on different substrates. Our results show that the GaN epilayers with thickness of about 1 mu m are not fully relaxed. The strain situation in a GaN epilayer grown on SiC substrate is totally different from that in GaN layer on sapphire, which are the main reason for the scatter in the recent data on the optical properties of group III nitrides. (C) 1996 American Institute of Physics.
引用
收藏
页码：2705 / 2707
页数：3
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