Low-Temperature Sintering and Microwave Dielectric Properties of MgZrNb2O8 Ceramics with BaCu (B2O5) Addition

The effects of BaCu (B2O5) doping on sintering characteristics, phase constitute, and dielectric properties of MgZrNb2O8 ceramics were investigated. Results indicated that a small amount of BaCu (B2O5) can effectively lower the sintering temperature of MgZrNb2O8 ceramics from 1300 degrees C to 1100 degrees C due to liquid phase sintering effect. However, the second phase of Ba3Nb8O21 appeared when the addition of BaCu (B2O5) exceeds 2wt%. Typically, 2wt% BaCu (B2O5)-added MgZrNb2O8 ceramics sintered at 1100 degrees C for 4 h could reach dense structure and exhibited microwave dielectric properties of epsilon(r) = 25.96, Qxf = 65,064GHz (f = 8.68GHz), and tau(f) = -47 ppm/degrees C. Moreover, this ceramic has a chemical compatibility with Ag70/Pd30 electrodes, making it a very promising candidate material for the application of microwave multilayer electronic components.