Behavior of Si-Si Bond Oxidation by Electron Beam Lithography

被引：3

作者：

Noda, Kunihiro ^{[1
,2
]}

Seshimo, Takehiro ^{[1
]}

Suzuki, Issei ^{[1
]}

Misumi, Kouichi ^{[1
]}

Shiota, Dai ^{[1
]}

Kikuchi, Shun ^{[2
]}

Furutani, Masahiro ^{[2
]}

Arimitsu, Koji ^{[2
]}

机构：

[1] Tokyo Ohka Kogyo Co Ltd, Tabata 1590, Samukawa, Kanagawa 2530114, Japan

[2] Tokyo Univ Sci, Fac Sci & Technol, Dept Pure & Appl Chem, 2641 Yamazaki, Noda, Chiba 2788510, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2018年 / 31卷 / 04期

关键词：

Polysilane; Electron beam; Lithography; FILMS; FABRICATION; PHOTOLYSIS;

D O I：

10.2494/photopolymer.31.581

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Lithography using siloxane polymers is reasonable for process reduction compared to mask etching process. Generally, crosslinkable groups, such as acrylates and epoxides, and protecting groups are added to siloxane polymers for lithography. We synthesized polydiphenylsilane without those functional groups, and the thermal behavior of that was observed with TG-DSC-MS. The thermal elimination of phenyl group from polydiphenylsilane was observed and the thermal weight loss until 500 degrees C was under 3%. The polysilane film was directly imaged with EB nano melting apparatus (ENF-3500) and line width of pattern was 12.9 mu m. The film thicknesses before and after development were same. The partial heating by EB irradiation caused oxidation of polydiphenylsilane after elimination reaction of phenyl group and cleavage of Si-Si bond by XPS analysis.

引用

页码：581 / 585

页数：5

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