Carrier Transport on Dislocations in Silicon

被引：2
|
作者：
Reiche, M. [2 ]
Kittler, M. [1 ,3 ]
Krause, H-M. [1 ,3 ]
Uebensee, H. [4 ]
机构：
[1] IHP Microelect, D-15236 Frankfurt, Oder, Germany
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Joint Lab IHP BTU, D-03046 Cottbus, Germany
[4] CIS Forschungsinst Mikrosensor & Photovolla GmbH, D-99099 Erfurt, Germany
来源：
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷
关键词：
dislocation networks; Si; MOS-FETs; charge carrier mobility; shallow dislocation bands; Coulomb blockades;
D O I：
10.1063/1.4865599
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of dislocations in the channel of MOS-FETs is analyzed. The drain current at room temperature increases about 50 times for nFETs and about 10 times for pFETs, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.
引用
收藏
页码：33 / 36
页数：4
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