Mesoscale modeling of diffusion in polycrystalline structures

被引：2
|
作者：
Bassman, LC
Ibrahim, NR
Pinsky, PM
Saraswat, KC
Deal, MD
机构：
来源：
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 1997年
关键词：
D O I：
10.1109/SISPAD.1997.621359
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a new diffusion simulation methodology which has been developed as part of our BackEnd Simulation Tool (BEST) effort. This approach uses the finite element method to address issues critical for modeling polycrystalline materials at the mesoscopic scale. We have included separate grain and grain boundary diffusion, spatially continuous material properties and the concept of equilibrium concentration.
引用
收藏
页码：149 / 152
页数：4
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