Subpicosecond carrier-phonon interactions in GaAs/AlxGa1-xAs MQW':: Plasmon-phonon coupling mediated by well-to-well coupling in MQW's

被引：0

作者：

Yee, KJ ^{[1
]}

Kim, DS ^{[1
]}

Yee, DS ^{[1
]}

Dekorsy, T ^{[1
]}

Cho, GC ^{[1
]}

Kurz, H ^{[1
]}

Woo, DH ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

来源：

ULTRAFAST PHENOMENA XI | 1998年 / 63卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

We study coherent phonon oscillations in GaAs/AlxGa1-xAs MQW's with varying x and fixed well and barrier widths of 100 Angstrom. We have observed large plasmon-phonon coupling in x = 0.2 MQW, although it is generally believed that the 2D nature of plasmon makes the plasmon-phonon coupling very difficult. One possible explanation for this phenomenon is the bulk-like, growth direction plasmon oscillations mediated by the anomalously large well-to-well coupling for small x (x < 0.35).

引用

页码：266 / 268

页数：3

共 46 条

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