Electromigration-induced microstructure evolution in tin studied by synchrotron x-ray microdiffraction

被引:52
|
作者
Wu, AT [1 ]
Tu, KN
Lloyd, JR
Tamura, N
Valek, BC
Kao, CR
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[4] Natl Cent Univ, Dept Chem & Mat Engn, Chungli 32054, Taiwan
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1795353
中图分类号
O59 [应用物理学];
学科分类号
摘要
Under constant current electromigration, white tin exhibited a resistance drop of up to 10%. It has a body-centered-tetragonal structure, and the resistivity along the a and b axes is 35% smaller than along the c axis. Microstructure evolution under electromigration could be responsible for the resistance drop. Synchrotron radiation white beam x-ray microdiffraction was used to study this evolution. Grain-by-grain analysis was obtained from the diffracted Laue patterns about the changes of grain orientation before and after electromigration. We observed that high-resistance grains reorient with respect to the neighboring low-resistance grains, most likely by grain growth of the latter. A different mechanism of grain growth under electromigration from the normal grain growth is proposed and discussed. (C) American Institute of Physics.
引用
收藏
页码:2490 / 2492
页数:3
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