Spin transport and precession in graphene measured by nonlocal and three-terminal methods

被引:35
|
作者
Dankert, Andre [1 ]
Kamalakar, Mutta Venkata [1 ]
Bergsten, Johan [1 ]
Dash, Saroj P. [1 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
关键词
SILICON;
D O I
10.1063/1.4876060
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and three-terminal measurement geometries. Identical spin lifetimes, spin diffusion lengths, and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters. (C) 2014 AIP Publishing LLC.
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页数:4
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