Heterostructural phase diagram of Ga2O3 based solid solution with Al2O3

被引:19
|
作者
Kim, Hyeon Woo [1 ,2 ]
Ko, Hyunseok [1 ]
Chung, Yong-Chae [2 ]
Cho, Sung Beom [1 ]
机构
[1] Korea Inst Ceram Engn & Technol KICET, Convergence Technol Div, Jinju Si 52851, Gyeongsangnam D, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
Ultra-wide bandgap; Solid solution; Ga2O3; Heterostructural alloy; First-principles calculation; BETA-GA2O3; SINGLE-CRYSTALS; FILMS;
D O I
10.1016/j.jeurceramsoc.2020.08.067
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ga2O3, which is emerging as semiconductor material due to the ultra-wide bandgap, has tunability in bandgap and lattice constant by alloying Al. However, successful control of alloying phase is still challenging due to its hetemstructural nature and rich polymorphs. Here, we identified the thermodynamic phase diagram of heterostructural (AlxGa1-x)(2)O-3 alloy. Using density-functional theory (DFT) calculations and regular solution model, we calculated the Gibbs-free energy of mixing of hetemstructural polymorphs. Based on the calculation, we show the phase diagram of (AlxGa1-x)(2)O-3 alloy system with a markedly increased metastability than the isostructural alloy, which can make a vast phase space for homogeneous single-phase alloys. We also investigated the correlation between the bandgap and lattice constant within these systems using hybrid DFT calculations, which can guide the device design of Ga2O3 power electronics.
引用
收藏
页码:611 / 616
页数:6
相关论文
共 50 条
  • [1] Synthesis and properties of γ-Ga2O3–Al2O3 solid solutions
    T. N. Afonasenko
    N. N. Leont’eva
    V. P. Talzi
    N. S. Smirnova
    G. G. Savel’eva
    A. V. Shilova
    P. G. Tsyrul’nikov
    [J]. Russian Journal of Physical Chemistry A, 2017, 91 : 1939 - 1945
  • [2] High Efficiency of a Two-Stage Packed Ga2O3/Al2O3 and a Mixture of Ga2O3/Al2O3 with Mn2O3 for No Reduction
    Laiyuan Chen
    Tatsuro Horiuchi
    Toshiaki Mori
    [J]. Reaction Kinetics and Catalysis Letters, 2000, 69 : 265 - 270
  • [3] High efficiency of a two-stage packed Ga2O3/Al2O3 and a mixture of Ga2O3/Al2O3 with Mn2O3 for NO reduction
    Chen, LY
    Horiuchi, T
    Mori, T
    [J]. REACTION KINETICS AND CATALYSIS LETTERS, 2000, 69 (02): : 265 - 270
  • [4] Band alignment of Al2O3 with (-201) β-Ga2O3
    Carey, Patrick H.
    Ren, F.
    Hays, David C.
    Gila, B. P.
    Pearton, S. J.
    Jang, Soohwan
    Kuramata, Akito
    [J]. VACUUM, 2017, 142 : 52 - 57
  • [5] Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3
    Zhang, Y.
    Liu, M.
    Jena, D.
    Khalsa, G.
    [J]. JOURNAL OF APPLIED PHYSICS, 2022, 131 (17)
  • [6] Metal oxide catalysts for DME steam reforming: Ga2O3 and Ga2O3–Al2O3 catalysts
    Thomas Mathew
    Yusuke Yamada
    Atsushi Ueda
    Hiroshi Shioyama
    Tetsuhiko Kobayashi
    [J]. Catalysis Letters, 2005, 100 : 247 - 253
  • [7] SYSTEMATICS OF EVAPORATION COEFFICIENT AL2O3 GA2O3 IN2O3
    BURNS, RP
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (09): : 3307 - +
  • [8] Defect phase diagram for doping of Ga2O3
    Lany, Stephan
    [J]. APL MATERIALS, 2018, 6 (04):
  • [9] Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors
    Fang, Paiwen
    Liao, Zhengyi
    Su, Danni
    Liang, Jun
    Wang, Xinzhong
    Pei, Yanli
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (08)
  • [10] Ga2O3 MOSFET Device with Al2O3 Gate Dielectric
    Lv Yuan-Jie
    Song Xu-Bo
    He Ze-Zhao
    Tan Xin
    Zhou Xing-Ye
    Wang Yuan-Gang
    Gu Guo-Dong
    Feng Zhi-Hong
    [J]. JOURNAL OF INORGANIC MATERIALS, 2018, 33 (09) : 976 - 980