Measurements of the Carrier Dynamics and Terahertz Response of Oriented Germanium Nanowires using Optical-Pump Terahertz-Probe Spectroscopy

被引:54
|
作者
Strait, Jared H. [1 ]
George, Paul A. [1 ]
Levendorf, Mark [2 ]
Blood-Forsythe, Martin [2 ]
Rana, Farhan [1 ]
Park, Jiwoong [2 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Chem & Chem Biol, Ithaca, NY USA
基金
美国国家科学基金会;
关键词
SEMICONDUCTOR NANOWIRES; RELAXATION; SILICON; RADIATION;
D O I
10.1021/nl901373j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have measured the terahertz response of oriented Germanium nanowires using ultrafast optical-pump terahertz-probe spectroscopy. We present results on the time, frequency, and polarization dependence of the terahertz: response. Our results indicate intraband energy relaxation times of photoexcited carriers in the 1.5-2.0 ps range, carrier density dependent interband electron-hole recombination times in the 75-125 ps range, and carrier momentum scattering rates in the 60-90 fs range. Additionally, the terahertz response of the nanowires is strongly polarization dependent despite the subwavelength dimensions of the nanowires, The differential terahertz transmission is found to be large when the field is polarized parallel to the nanowires and very small when the field is polarized perpendicular to the nanowires. This polarization dependence of the terahertz response can be explained in terms of the induced depolarization fields and the resulting magnitudes of the surface plasmon frequencies.
引用
收藏
页码:2967 / 2972
页数:6
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