Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

被引：8

作者：

Shieh, JL

Chang, MN

Cheng, YS

Chyi, JI

机构：

[1] Department of Electrical Engineering, National Central University, Chung-Li

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 01期

关键词：

D O I：

10.1063/1.365799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively. (C) 1997 American Institute of Physics.

引用

页码：210 / 213

页数：4

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