Growth of inclusion-free InSb crystals by vertical Bridgman method

被引：5
|
作者：
Mohan, P
Senguttuvan, N
Babu, SM
Ramasamy, P [1 ]
机构：
[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, India
[2] Shonan Inst Technol, Fujisawa, Kanagawa, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 211卷 / 1-4期
关键词：
InSb; vertical Bridgman method; etching; inclusions;
D O I：
10.1016/S0022-0248(99)00833-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Inclusions were observed in indium antimonide crystals grown by the vertical Bridgman technique. The presence of these inclusions depends on several factors such as synthesis temperature, synthesis time, thermal gradient, ampoule lowering rate and ampoule geometry. These inclusions were analysed by electron probe microanalysis. Series of experiments were carried out to optimise the growth conditions to obtain inclusion-free InSb crystals. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：207 / 210
页数：4
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