Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

被引：5

作者：

Luo, B

Kim, J

Mehandru, R

Ren, F ^{[1
]}

Lee, KP

Pearton, SJ

Polyakov, AY

Smirnov, NB

Govorkov, AV

Kozhukhova, EA

Osinsky, AV

Norris, PE

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Inst Rare Met, Moscow 109017, Russia

[4] Corning Appl Technol, Woburn, MA 01801 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1016/S0038-1101(02)00066-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN/SiC and Al0.5Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 degreesC for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10(-6) Omega cm(2) range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample. with value similar to5.5 +/- 2.5 x 10(-3) V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states. (C) 2002 Published by Elsevier Science Ltd.

引用

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页码：1345 / 1349

页数：5

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