Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

We investigated the effects of the active layers deposition temperature on the electrical performance of p-type tin-oxide thin-film transistors (TFTs). Negligible currents flowed between the source and the drain electrodes in the devices with tin-oxide thin films deposited at 60 A degrees C and 220 A degrees C, but devices with tin-oxide thin films deposited at 100, 140, and 180 A degrees C exhibited typical p-type characteristics. For deposition temperatures ranging from 100 to 180 A degrees C, the field-effect mobility decreased and the turn-on voltage moved in the negative direction as the deposition temperature was increased, which was mainly attributed to a decrease in the grain size based on the grainboundary charge-trapping mechanism. Our experimental results show that it is very important to optimize the active layers deposition temperature to improve the electrical performance in p-type tin-oxide TFTs.