CD Metrology for EUV Lithography and Etch

被引：0

作者：

Johanesen, Hayley ^{[1
]}

Kenslea, Anne ^{[1
]}

Williamson, Mark ^{[1
]}

Knowles, Matt ^{[1
]}

Kwakman, Laurens ^{[1
]}

Levi, Shimon ^{[2
]}

Nishry, Noam ^{[2
]}

Adan, Ofer ^{[2
]}

Englard, Ilan ^{[2
]}

Van Puymbroeck, Jan ^{[3
]}

Felder, Dan ^{[3
]}

Gov, Shahar ^{[4
]}

Cohen, Oded ^{[4
]}

Turovets, Igor ^{[4
]}

机构：

[1] FEI, Acht, Netherlands

[2] Appl Mat Inc, Rehovot, Israel

[3] IMEC, Leuven, Belgium

[4] NOVA, Rehovot, Israel

来源：

2015 26TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2015年

关键词：

CD metrology; LER; LWR; CD-SEM; OCD; STEM; accuracy; reproducibility; EUV patterning;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement and control of lithography and etch process windows requires continuous advancements in process monitoring metrology. High volume, in-line metrology techniques such as CD-SEM and scatterometry need to be accurate, reproducible and sensitive to process variations at (sub) nm level. To ensure adequate metrology capabilities, these high volume metrology techniques can benefit from reference metrology such as STEM and novel approaches such as hybrid metrology to reduce the total measurement uncertainty (TMU).

引用

页码：329 / 335

页数：7

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