Lead inclusions in silicon:: Structure, morphology, and thermal behavior

被引：12
|
作者：
Hagège, S [1 ]
机构：
[1] CNRS, Ctr Etud Chim Met, F-94407 Vitry Sur Seine, France
来源：
INTERFACE SCIENCE | 1999年 / 7卷 / 02期
关键词：
Si; Pb; Al; monotectic alloys; equilibrium morphology; interfacial energy; twins; melt spinning; TEM;
D O I：
10.1023/A:1008703715721
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Small inclusions of lead have been embedded in pure silicon by rapid quenching. They are topotactic-truncated octahedra with a smaller aspect ratio than the ones found in aluminum. They appear also on single and multiple twins as a bicrystalline unit with a compound morphology. No overheating has been detected, while undercooling is size dependent and can reach 80 K. These results are compared to the structure, morphology and thermal behavior of lead inclusions in aluminum and other cubic matrices.
引用
收藏
页码：85 / 101
页数：17
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