Activated and intermittent photoluminescence in thin CdSe quantum dot films

被引：26
|
作者：
Javier, A [1 ]
Strouse, GF [1 ]
机构：
[1] Florida State Univ, Dept Chem & Biochem, Tallahassee, FL 32306 USA
来源：
CHEMICAL PHYSICS LETTERS | 2004年 / 391卷 / 1-3期
关键词：
D O I：
10.1016/j.cplett.2004.04.084
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Excitation-power dependent photoluminescence (PL) studies on CdSe quantum dot thin films under ambient conditions reveal complementary processes that alter the ensemble spectral characteristics. Auger charging and photo-oxidation result in PL quenching, while reversible gas adsorption activates PL by pushing the surface-trapped carrier back into the dot core. Under high excitation power, the PL is enhanced by photochemical formation of an inorganic oxide layer. A correlation between ensemble PL behavior and embedded intensity fluctuations supports this model. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：60 / 63
页数：4
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