Large negative magnetoresistance introduced by line dislocations in a modulation doped Ga0.25In0.75As/InP quantum well

被引：2
|
作者：
Ramvall, P
Carlsson, N
Omling, P
Samuelson, L
Seifert, W
机构：
[1] Department of Solid State Physics, Lund University, Box 118
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 21卷 / 02期
基金：
瑞典研究理事会;
关键词：
Shubnikov de Hass; quantum Hall; high mobility; ternary alloy; line dislocations; magnetic breakdown;
D O I：
10.1006/spmi.1996.0187
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A large negative magnetoresistance at low magnetic fields of a high mobility two dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP quantum well containing dislocations is reported. The effect is attributed to electrons on open orbits caused by scattering against the potential created by line dislocations formed in the Ga0.25In0.75As layer when the critical thickness for growth on InP was exceeded. By comparing the magnetoresistance for the structures containing dislocations with those without, but with etched trenches with a similar distribution as the line dislocations, we conclude that the dislocations introduce a strong potential in the two dimensional electron gas. (C) 1997 Academic Press Limited
引用
收藏
页码：231 / 236
页数：6
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