Mid-infrared absorption by short-period InAs/GaSb type II superlattices

被引：1
|
作者：
Li, L. L. [1 ]
Xu, W. [1 ,2 ]
Zeng, Z. [1 ]
Wright, A. R. [3 ]
Zhang, C. [3 ]
Zhang, J. [2 ]
Shi, Y. L. [4 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Yunnan Univ, Dept Phys, Kunming 650091, Peoples R China
[3] Univ Wollongong, Sch Engn Phys, Wollongong, NSW 2522, Australia
[4] Kunming Inst Phys, Kunming, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 4-5期
基金：
中国国家自然科学基金;
关键词：
InAs/GaSb type II superlattic; Mid-infrared detection; Optical absorption; PHOTOVOLTAIC DETECTORS;
D O I：
10.1016/j.mejo.2008.11.050
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a theoretical study on optical properties of short-period InAs/GaSb type-II superlattices (SLs) which can serve for mid-infrared (MIR) detection. The miniband structure Of such SLs is calculated using the Kronig-Penney model. On the basis of the energy-balance equation derived from the Boltzmann equation we calculate the optical absorption coefficient. The obtained results agree with recent experimental findings. Moreover, the dependence of the MIR absorption in InAs/GaSb type-II SLs on temperature and well-widths are examined. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：815 / 817
页数：3
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