Exciton <>Aharonov-Bohm<> effect in quantum dot rings

被引:4
|
作者
Grochol, M. [1 ]
Grosse, F. [1 ]
Zimmermann, R. [1 ]
机构
[1] Humboldt Univ, Inst Phys, Newtonstr 15, D-12485 Berlin, Germany
关键词
D O I
10.1002/pssc.200668082
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The exciton Aharonov-Bohm effect in InP/GaAs quantum dots is investigated for different geometries. Strong confinement in the growth direction is assumed. The effects of the strain on the conduction and valence bands are included adopting an isotropic elasticity approach. It is shown that the inclusion of strain induces a ring-like confinement for the hole but not for the electron. This is not sufficient to observe exciton Aharonov-Bohm oscillations in these structures. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2518 / +
页数:2
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