A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAsFETs

被引：0

作者：

Pesare, M ^{[1
]}

Giorgio, A ^{[1
]}

Perri, AG ^{[1
]}

机构：

[1] Politecn Bari, Dipartimento Elettrotecn & Elettron, I-70125 Bari, Italy

来源：

ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper a 2-D I-V MMSFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Changet al. [1] has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.

引用

页码：197 / 200

页数：4

共 50 条

[1] Extraction of MESFET small signal equivalent circuit parameters
Pandey, AK
Thakur, JP
Shukla, SR
Vyas, HP
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 625 - 628
[2] An Estimation Method to Determine Equivalent Circuit Parameters for Harmonic Analysis
Tada, Yasuyuki
ELECTRICAL ENGINEERING IN JAPAN, 2014, 187 (01) : 16 - 23
[3] An estimation method to determine equivalent circuit parameters for the harmonic analysis
Tada, Yasuyuki
IEEJ Transactions on Power and Energy, 2012, 132 (06) : 597 - 603
[4] A method to simultaneously extract the small-signal equivalent circuit and noise parameters of heterojunction bipolar transistors
Carmen Maya, Ma.
Lazaro, Antonio
Pradell, Lluis
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2006, 48 (07) : 1372 - 1379
[5] RDF analysis of small-signal equivalent circuit parameters in MOSFET devices
Oniciuc, L.
Andrei, P.
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 449 - 452
[6] A distributed small signal equivalent circuit modeling method for InP HEMT
Qi Jun-Jun
Lyu Hong-Liang
Cheng Lin
Zhang Yu-Ming
Zhang Yi-Men
Zhao Feng-Guo
Duan Lan-Yan
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 41 (02) : 511 - 516
[7] Small-signal equivalent circuit parameters extracted from an "atomistic" simulation
Costa, AD
Machado, PCM
de Figueiredo, SA
PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II, 2003, : 781 - 784
[8] Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-Π model
Suh, Y.
Seok, E.
Shin, J.-H.
Kim, B.
Heo, D.
Raghavan, A.
Laskar, J.
IEEE MTT-S International Microwave Symposium Digest, 2000, 3 : 1401 - 1404
[9] Extraction of circuit parameters of an equivalent circuit of a solar cell by the analysis of small signal photoresponse of the solar cell
Yui, N.
Hayashi, Y.
Nakamura, K.
Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 1991, 55 (01): : 164 - 173
[10] Direct extraction technique for a small-signal mosfet equivalent circuit with substrate parameters
Lee, S
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 39 (04) : 344 - 347

← 1 2 3 4 5 →