Determination of the planarization distance for copper CMP process

被引：0

作者：

Hymes, S ^{[1
]}

Smekalin, K ^{[1
]}

Brown, T ^{[1
]}

Yeung, H ^{[1
]}

Joffe, M ^{[1
]}

Banet, M ^{[1
]}

Park, T ^{[1
]}

Tugbawa, T ^{[1
]}

Boning, D ^{[1
]}

Nguyen, J ^{[1
]}

West, T ^{[1
]}

Sands, W ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

CHEMICAL-MECHANICAL POLISHING - FUNDAMENTALS AND CHALLENGES | 2000年 / 566卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.

引用

页码：211 / 216

页数：6

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