Vertical Schottky Barrier Diodes Fabricated on Un-intentionally Doped and Sn-doped (-201) bulk β-Ga2O3 Substrates

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作者：
Verma, Amit [1 ]
Jena, Debdeep [1 ,2 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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