Growth of GaN/AlN quantum dots on SiC(000(1)over-bar) by plasma-assisted MBE

被引：0
|
作者：
Gogneau, N
Fossard, F
Monroy, E
Monnoye, S
Mank, H
Daudin, B
机构：
[1] CEA, CNRS, UJF Nanophys & Semicond, DRFMC,SP2M,Equipe Mixte, F-38054 Grenoble 9, France
[2] NOVASiC Savoie Technolac, F-73375 Le Bourget Du Lac, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
molecular beam epitaxy; GaN; N-polarity; quantum dots; Ga surfactant effect;
D O I：
10.4028/www.scientific.net/MSF.457-460.1557
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The GaN/AlN system grown on SiC(000 (1) over bar) by plasma assisted molecular-beam epitaxy presents N-polarity. Based on reflection high-energy electron diffraction (RHEED) experiments, we demonstrate that 1 ML of Ga behaves as a surfactant during the growth of GaN on AlN(000 (1) over bar) surface, which makes possible to synthesize GaN quantum dots using the Modified Stranski-Krastanow growth mode. The N-polarity GaN islands formed on AlN (000 (1) over bar) are hexagonal pyramids with {1 (1) over bar 0 (3) over bar} facets. The island density can be controlled in the 3 - 9 x 10(10) cm(-2) range.
引用
收藏
页码：1557 / 1560
页数：4
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