High frequency components of current fluctuations in semiconductor tunneling barriers

被引:15
|
作者
Oriols, X [1 ]
Martín, F [1 ]
Suñé, J [1 ]
机构
[1] Univ Autonoma Barcelona, Dept Elect Engn, ETSE, Bellaterra 08193, Spain
关键词
D O I
10.1063/1.1482136
中图分类号
O59 [应用物理学];
学科分类号
摘要
The power spectral density of current noise in phase-coherent semiconductor tunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An enhancement of the power spectral density of the current fluctuations is predicted for very high frequencies. The experimental measurement of this high frequency effect is discussed as a possible test of Bohm trajectories. (C) 2002 American Institute of Physics.
引用
收藏
页码:4048 / 4050
页数:3
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