A novel AlGaAs/GaAs heterojunction-based Hall sensor designed for low magnetic field measurements

A self-consistent theoretical analysis, using both Schrodinger and Poisson equations, is made to investigate and propose novel Hall devices based on AlGaAs/GaAs heterostructures. The novel heterostructures are designed and optimized with respect to the measurements of low magnetic field du to their high sensitivity. In this study we attempt to show that the electron mobility of the studied heterostructure may be enhanced without loss in interface electron concentration by both increasing the spacer thickness and by inserting a delta-doping in a narrow quantum well within the AlGaAs barrier where the Al concentration in the well is less than in the barrier. Therefore, we predict a significant enhancement of device sensitivity to low magnetic field without compromise in noise performance. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.