A CMOS Single-Chip for 868 MHz and 915 MHz Bands Wireless Sensor Network Applications

被引:0
|
作者
Kang, Hoyong [1 ]
Trung-Kien Nguyen [1 ]
Kim, Eun-Hee [1 ]
Pyo, Cheol Sig [1 ]
Kim, Changwan [2 ]
Jang, Youn-Seon [3 ]
机构
[1] Elect & Telecommun Res Inst, 218 Gajeong Dong, Taejon 305700, South Korea
[2] Dong A Univ, Dept Elect Engn, Busan 604714, South Korea
[3] Chungnam Natl Univ, Dept Elect & Informat & Commun Engn, Daejeon, South Korea
关键词
CMOS; Low-Power; RFIC; Sing-chip; WSN;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and experimental results of low power CMOS single-chip for 868 MHz and 915 MHz bands wireless sensor network applications based on IEEE 802.15.4 standard; especially RF transceiver part. Single-chip radio consists of RF transceiver section and digital baseband section. Implemented in a 0.18 mu m CMOS technology the receiver shows sensitivity of -100dBm and -93 dBm in BPSK and OQPSK modulation schemes, respectively, and dynamic range of 80 dB. The transmitter path shows a maximum of +10 dBm output power with EVM of less than 6.8% RMS and 12% RMS in BPSK and OQPSK modulation schemes, respectively. The RF transceiver consumes 16 mA in receive mode and 24.5 m A in transmit mode under supply voltage of 1.8 V in which 5 mA of frequency synthesizer is included. The implemented single-chip occupies 16 mm(2) silicon area in which 10 mm(2) is used for the RF transceiver section.
引用
收藏
页码:30 / 35
页数:6
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