A 24-GHz 3.8-dB NF Low-Noise Amplifier with Built-In Linearizer

被引：0
|
作者：
Kuo, Yen-Hung [1 ,2 ]
Tsai, Jeng-Han [3 ]
Chou, Wei-Hung [1 ,2 ]
Huang, Tian-Wei [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 106, Taiwan
[3] Natl Taiwan Normal Univ, Dept Appl Elect Technol, Taipei 106, Taiwan
来源：
2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年
关键词：
CMOS; K-band; linearizer; low noise amplifier (LNA); LOW-POWER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A K-band low-noise amplifier with built-in linearizer using 0.18-mu m CMOS technology is presented in this paper. To achieve good linearity at high frequency, a distributed derivative superposition linearization technique is used. The measured results show that the improvement of IIP3 and IM3 are 5.3 dB and 10.6 dB at 24 GHz, respectively. The proposed LNA has a noise figure of 3.8 dB and a peak gain of 13.7 dB while consuming 18 mW dc power. To the best of our knowledge, this is the first LNA with a built-in linearizer above 20 GHz in CMOS.
引用
收藏
页码：1505 / 1508
页数：4
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