Characterization for 64x64 InSb photovoltaic infrared detector array

Statistical characterization and uniformity evaluation for 64 X 64 InSb photovoltaic detector arrays prepared for fabrication of staring infrared focal plane array by using modified cryomicroprobing technique were carried out. Typical values of mean detector impedance 42Mh Omega at 90K and zero bias with nonuniformity 20%, mean responsivity 2.8A/W for 1000K blackbody with nonuniformity 6.3%, and electrical crosstalk rate less than 2% were measured. These performances meet the technical requirements to fabrication of hybrid InSb focal plane arrays. Localized electrical crosstalk detected on some abnormal chips was discussed.