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Decay mechanisms of excited electrons in quantum-well states of ultrathin Pb islands grown on Si(111): Scanning tunneling spectroscopy and theory
被引:52
|作者:
Hong, I-Po
[1
]
Brun, Christophe
[1
]
Patthey, Francois
[1
]
Sklyadneva, I. Yu.
[2
,3
]
Zubizarreta, X.
[2
,4
,5
]
Heid, R.
[6
]
Silkin, V. M.
[2
,4
,5
]
Echenique, P. M.
[2
,4
,5
]
Bohnen, K. P.
[6
]
Chulkov, E. V.
[2
,4
,5
]
Schneider, Wolf-Dieter
[1
]
机构:
[1] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland
[2] DIPC, San Sebastian 20018, Basque Country, Spain
[3] Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[4] Univ Basque Country, Dept Fis Mat, San Sebastian 20080, Basque Country, Spain
[5] Univ Basque Country, Fac Ciencias Quim, CSIC, Ctr Mixto, San Sebastian 20080, Basque Country, Spain
[6] Forschungszentrum Karlsruhe, Inst Festkorperphys, D-76021 Karlsruhe, Germany
基金:
瑞士国家科学基金会;
关键词:
ab initio calculations;
electron-phonon interactions;
elemental semiconductors;
lead;
metallic thin films;
quantum wells;
scanning tunnelling spectroscopy;
silicon;
spectral line broadening;
SURFACE;
FILMS;
MICROSCOPE;
LIFETIME;
D O I:
10.1103/PhysRevB.80.081409
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Using low-temperature scanning tunneling spectroscopy at 5 and 50 K, we studied the linewidth of unoccupied quantum-well states in ultrathin Pb islands, grown on Si(111) on two different Pb/Si interfaces. A quantitative analysis of the differential conductance spectra allowed us to determine the electron-electron (e-e), electron-phonon (e-ph) and the interface and defect contributions to the lifetime. Layer-dependent ab initio calculations of the e-ph linewidth contribution are in excellent agreement with the data. Importantly, the sum of the calculated e-e and e-ph lifetime broadening follows the experimentally observed quadratic energy dependence.
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页数:4
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