Decay mechanisms of excited electrons in quantum-well states of ultrathin Pb islands grown on Si(111): Scanning tunneling spectroscopy and theory

被引:52
|
作者
Hong, I-Po [1 ]
Brun, Christophe [1 ]
Patthey, Francois [1 ]
Sklyadneva, I. Yu. [2 ,3 ]
Zubizarreta, X. [2 ,4 ,5 ]
Heid, R. [6 ]
Silkin, V. M. [2 ,4 ,5 ]
Echenique, P. M. [2 ,4 ,5 ]
Bohnen, K. P. [6 ]
Chulkov, E. V. [2 ,4 ,5 ]
Schneider, Wolf-Dieter [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland
[2] DIPC, San Sebastian 20018, Basque Country, Spain
[3] Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[4] Univ Basque Country, Dept Fis Mat, San Sebastian 20080, Basque Country, Spain
[5] Univ Basque Country, Fac Ciencias Quim, CSIC, Ctr Mixto, San Sebastian 20080, Basque Country, Spain
[6] Forschungszentrum Karlsruhe, Inst Festkorperphys, D-76021 Karlsruhe, Germany
基金
瑞士国家科学基金会;
关键词
ab initio calculations; electron-phonon interactions; elemental semiconductors; lead; metallic thin films; quantum wells; scanning tunnelling spectroscopy; silicon; spectral line broadening; SURFACE; FILMS; MICROSCOPE; LIFETIME;
D O I
10.1103/PhysRevB.80.081409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using low-temperature scanning tunneling spectroscopy at 5 and 50 K, we studied the linewidth of unoccupied quantum-well states in ultrathin Pb islands, grown on Si(111) on two different Pb/Si interfaces. A quantitative analysis of the differential conductance spectra allowed us to determine the electron-electron (e-e), electron-phonon (e-ph) and the interface and defect contributions to the lifetime. Layer-dependent ab initio calculations of the e-ph linewidth contribution are in excellent agreement with the data. Importantly, the sum of the calculated e-e and e-ph lifetime broadening follows the experimentally observed quadratic energy dependence.
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页数:4
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