Electrical conductivity measurement in a Se-Te-In system

The I-V characteristics and d.c. conductivity measurements of Se70Te30-xInx, where x = 0, 1, 3, 5, 7, 9% atomic weight, have been experimentally investigated. The increase in room temperature conductivity is attributed to increase in the percentage of indium (In), which creates charged centres inside the bulk of the material. The decrease in activation energy with increase in indium content has been discussed on the basis of formation of new charged centres, In-4(-) (C-2(0))(3), in the mobility gap which shifts the Fermi level towards the valence band. An energy band diagram has been suggested on the basis of new charged centres, In-4(-) (C-2(0))(3) and C-3(+), for Se-Te-In system.