A Novel Sub-1 Volt Bandgap Reference with all CMOS

被引:0
|
作者
Somvanshi, Sameer [1 ]
Bose, S. C. [2 ]
Gupta, Anu [1 ]
机构
[1] BITS Pilani, EEE Dept, Pilani, Rajasthan, India
[2] CEERI Pilani, IC Design Grp, Pilani, Rajasthan, India
关键词
CMOS; bandgap; subthreshold; temperature coefficient; process corner;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
This paper deals with the design of novel sub-1-V bandgap reference circuit using only MOS transistors in 0.18 mu m CMOS technology, for a supply voltage of 1.8V. The circuit produces a voltage reference of 466.5 mV at 27 degrees C with a temperature coefficient of 28.4 ppm/degrees C in the range of -20 to +120 degrees C. The power supply rejection of circuit is -30 dB at 8 KHz and this rejection further increase to -50 dB at 10 KHz. Power dissipation is 3.98 uW. The circuit is also tested at four process corners. Circuit is simulated with Eldo SPICE.
引用
收藏
页码:232 / +
页数:3
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