Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices

被引：25
|
作者：
Kozyukhin, Sergey [1 ]
Sherchenkov, Alexey [2 ]
Babich, Alexey [2 ]
Lazarenko, Petr [2 ]
Huy Phuc Nguyen [1 ]
Prikhodko, Oleg [3 ]
机构：
[1] RAS, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117901, Russia
[2] Natl Res Univ MIET, Moscow, Russia
[3] Al Farabi Kazakh Natl Univ, Sci Res Inst Expt & Theoret Phys, Alma Ata, Kazakhstan
来源：
CANADIAN JOURNAL OF PHYSICS | 2014年 / 92卷 / 7-8期
关键词：
KINETIC-PARAMETERS; OPTICAL-PROPERTIES;
D O I：
10.1139/cjp-2013-0607
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of Bi doping on the thermal, electrical, and optical properties of Ge2Sb2Te5 thin films was investigated. The existence of two Bi concentration ranges with different influence of dopant on the properties of thin films was established. At low concentrations (0.5-1.0 wt.% of Bi), anomalous deviations of physical properties from monotonous concentration dependences were observed. This effect is explained by the use of percolation theory, where formation of infinite clusters is accompanied by critical phenomena at critical concentrations.
引用
收藏
页码：684 / 689
页数：6
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