Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

被引：3
|
作者：
Miyazaki, Yusuke [1 ]
Maruyama, Eri [1 ]
Jia, Junjun [1 ]
Machinaga, Hironobu [2 ]
Shigesato, Yuzo [1 ]
机构：
[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Sagamihara, Kanagawa 2298558, Japan
[2] Nitto Denko Corp, Core Technol Res Ctr, Ibaraki, Osaka 5678680, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期
关键词：
OPTICAL-PROPERTIES; INTERNAL-STRESS;
D O I：
10.7567/JJAP.56.045503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate ( PET) substrates in the "transition region" by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 degrees C were 3.3 x 10%(-4) and 5.4 x 10%(-4) Omega.cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 x 10%(-4) Omega.cm were deposited at a dc self-bias voltage of -60 (C) 2017 The Japan Society of Applied Physics
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页数：7
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