Diffusion thermopower of a serial double quantum dot

被引：37
|
作者：
Thierschmann, H. [1 ]
Henke, M. [1 ]
Knorr, J. [1 ]
Maier, L. [1 ]
Heyn, C. [2 ,3 ]
Hansen, W. [2 ,3 ]
Buhmann, H. [1 ]
Molenkamp, L. W. [1 ]
机构：
[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
[2] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[3] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
来源：
NEW JOURNAL OF PHYSICS | 2013年 / 15卷
关键词：
OSCILLATIONS;
D O I：
10.1088/1367-2630/15/12/123010
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference Delta T = (20 +/- 10) mK across the device and find a maximum thermovoltage signal of several mu V in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.
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页数：8
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