Analysis of Local Minority Carrier Diffusion Lengths in Liquid-Phase Crystallized Silicon Thin-Film Solar Cells

被引：6
|
作者：
Sonntag, Paul [1 ]
Bokalic, Matevz [2 ]
Filipic, Miha [2 ]
Frijnts, Tim [3 ]
Amkreutz, Daniel [1 ]
Topic, Marko [2 ]
Rech, Bernd [1 ]
机构：
[1] Inst Silizium Photovolta, Helmholtz Zentrum Berlin Mat & Energie GmbH, D-12489 Berlin, Germany
[2] Univ Ljubljana, Fac Elect Engn, Ljubljana 1000, Slovenia
[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, PVcomB, D-12489 Berlin, Germany
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2017年 / 7卷 / 01期
关键词：
Diffusion length; light beam induced current (LBIC); liquid phase crystallization; silicon photovoltaics; GLASS; LIGHT;
D O I：
10.1109/JPHOTOV.2016.2615680
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We develop a method to quantify the local minority carrier diffusion lengths in interdigitated back-contact solar cells having a 10-mu m-thick liquid-phase crystallized (LPC) Si absorber by light-beam induced current (LBIC) measurements. The method is verified by 2-D simulations of the LBIC signals using ASPIN3. The effective minority carrier diffusion lengths determined this way range between 33 and 44 mu m inside a grain, which proves that advanced cell concepts like an interdigitated back contact (IBC) system are well suited for the LPC absorbers. Furthermore, the method has the potential to help improve the optimization of contact system geometries, and it may be used to understand the influences of different grain orientations and improve the LPC-Si absorber fabrication process.
引用
收藏
页码：32 / 36
页数：5
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