Diode-pumped Q-switched Nd:YVO4 laser with a low-temperaturegrown GaAs saturable absorber

被引：0
|
作者：
Gan, Yu [1 ]
Xiang, WangHua [1 ]
Zhang, ZhiGang [1 ]
Wang, YongGang [1 ]
Hang, QiChang [2 ]
Zhuo, Zhuang [2 ]
机构：
[1] Tianjin Univ, Coll Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China
[2] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Shandong, Peoples R China
来源：
ADVANCED LASER TECHNOLOGIES 2005, PTS 1 AND 2 | 2006年 / 6344卷
关键词：
laser; O-switched; Nd : YVO4; LT GaAs absorber;
D O I：
10.1117/12.693399
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A stable passively Q-switched Nd: YVO4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 mu J, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber
    李桂秋
    赵圣之
    杨克建
    赵宏明
    [J]. Chinese Optics Letters, 2004, (08) : 462 - 465
  • [2] Simultaneous mode locking in a diode-pumped passively Q-switched Nd:YVO4 laser with a GaAs saturable absorber
    Chen, YF
    Huang, KF
    Tsai, SW
    Lan, YP
    Wang, SC
    Chen, J
    [J]. APPLIED OPTICS, 2001, 40 (33) : 6038 - 6041
  • [3] Diode-pumped passively Q-switched Nd:YVO4 laser with a carbon nanotube saturable absorber
    Qin, H. B.
    Zhuo, Z.
    Liu, J.
    Zhang, H. B.
    Wang, Y. G.
    [J]. LASER PHYSICS, 2011, 21 (09) : 1562 - 1565
  • [4] Diode-pumped doubly Q-switched mode-locked YVO4/Nd YVO4 laser with AO and GaAs saturable absorber
    Zhang, Yan
    Zhao, Shengzhi
    Li, Dechun
    Yang, Kejian
    Li, Guiqiu
    Zhang, Gang
    Cheng, Kang
    [J]. OPTICS COMMUNICATIONS, 2010, 283 (24) : 5121 - 5125
  • [5] Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4/KTP green laser with AO and GaAs saturable absorber
    Zhang, Yan
    Zhao, Shengzhi
    Li, Dechun
    Yang, Kejian
    Li, Guiqiu
    Zhang, Gang
    Cheng, Kang
    [J]. OPTICAL MATERIALS, 2011, 33 (03) : 303 - 307
  • [6] Control of the pulse width in a diode-pumped passively Q-switched Nd:YVO4/KTP green laser with GaAs saturable absorber
    Li, G
    Zhao, S
    Yang, K
    Liu, J
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2005, 37 (07) : 635 - 647
  • [7] Control of the pulse width in a diode-pumped passively Q-switched Nd:YVO4/KTP green laser with GaAs saturable absorber
    G. Li
    S. Zhao
    K. Yang
    J. Liu
    [J]. Optical and Quantum Electronics, 2005, 37 : 635 - 647
  • [8] Output characteristics of diode-pumped, Q-switched Nd:YVO4 laser
    Yang, Chunlin
    Cai, Bangwei
    Zhang, Rongzhu
    [J]. Jiguang Jishu/Laser Technology, 2001, 25 (06):
  • [9] Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber
    Peng, Ji-Ying
    Wang, Bao-Shan
    Wang, Yong-Gang
    Miao, Jie-Guang
    Tan, Hui-Ming
    Qian, Long-Sheng
    Ma, Xiao-Yu
    [J]. OPTICS AND LASER TECHNOLOGY, 2008, 40 (02): : 243 - 246
  • [10] Simultaneous mode locking in a diode-pumped passively Q-switched Nd:YVO4laser with a GaAs saturable absorber
    [J]. Chen, Y.-F. (yfchen@ec.nctu.edu.tw), 2001, Optical Society of America (OSA) (40):
12345