Biexcitons in semiconductor quantum dot ensembles

被引：8

作者：

Moody, Galan ^{[1
,2
,3
]}

Singh, Rohan ^{[1
,2
,3
]}

Li, Hebin ^{[1
,2
]}

Akimov, Ilya A. ^{[4
,5
]}

Bayer, Manfred ^{[4
]}

Reuter, Dirk ^{[6
]}

Wieck, Andreas D. ^{[6
]}

Bracker, Allan S. ^{[7
]}

Gammon, Daniel ^{[7
]}

Cundiff, Steven T. ^{[1
,2
,3
]}

机构：

[1] Univ Colorado, JILA, Boulder, CO 80309 USA

[2] Natl Inst Stand & Technol, Boulder, CO 80309 USA

[3] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[4] Tech Univ Dortmund, D-44221 Dortmund, Germany

[5] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[6] Ruhr Univ Bochum, Lehrstuhl Angew Festkoerperphys, D-44780 Bochum, Germany

[7] Naval Res Lab, Washington, DC 20375 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2013年 / 250卷 / 09期

基金：

美国国家科学基金会;

关键词：

biexciton; four-wave mixing; quantum dots; quantum well; EXCITON DYNAMICS; SPECTROSCOPY;

D O I：

10.1002/pssb.201200725

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of confinement on biexciton renormalization in self-assembled InAs and interfacial GaAs quantum dot (QD) ensembles are studied using two-dimensional Fourier-transform spectroscopy. We find that in thermally annealed InAs QDs, changes in the biexciton transition energy are strongly correlated with those of the exciton and that the biexciton binding energy is similar for all QDs in the ensemble. These results are in contrast to those from GaAs QDs formed from interfacial fluctuations of a narrow quantum well (QW). In both the GaAs QW and QDs, correlation is reduced and the biexciton binding exhibits a strong dependence on localization. Comparison with simulations reveals how confinement and Coulomb interactions modify biexciton renormalization. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1753 / 1759

页数：7

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