Characterization of Bulk Defect Response in Cu(In, Ga)Se2 Thin-Film Solar Cell using DLTS

被引：0
|
作者：
Warren, Charles W. [1 ]
Miller, D. Westley [1 ]
Yasin, Fehmi [1 ]
Heath, Jennifer T. [2 ]
机构：
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Linfield Coll, Dept Phys, McMinnville, OR 97128 USA
来源：
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年
基金：
美国国家科学基金会;
关键词：
amorphous semiconductors; photovoltaic cells; thin film devices; capacitance measurement; semiconductor device measurement; SPACE-CHARGE SPECTROSCOPY; STATES;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se-2 devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.
引用
收藏
页码：170 / 173
页数：4
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