Fabrication of photonic band gap structures in As40S60 by focused ion beam milling

被引:14
|
作者
Dale, G [1 ]
Langford, RM [1 ]
Ewen, PJS [1 ]
Reeves, CM [1 ]
机构
[1] Univ Edinburgh, Dept Elect & Elect Engn, Edinburgh EH9 3JL, Midlothian, Scotland
关键词
D O I
10.1016/S0022-3093(00)00021-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on the use of focused ion beam (FIB) milling to produce photonic band gap (PBG) structures in As40S60 for applications in the near/mid-infrared (IR) spectral range. Kinetic milling parameters such as FIB current and spot-size have been adjusted in combination with chemically increased etching using iodine (I-2) to increase sputtering yield and improve sidewall verticality of the square holes. FIB milled cross-sections show that square holes deeper than 8 mu m with aspect ratios similar to 6:1 and a lattice spacing similar to 2 mu m can be milled with this technique. These structures are of dimensions suitable for operation in the wavelength range similar to 4.5-5.33 mu m where the interior absorption coefficient of As40S60 is approaching its minimum. Sub-micron holes with widths 0.66 mu m and depths greater than 3.77 mu m were milled using FIB currents of 12 pA with I-2 to facilitate chemically enhanced sputter yields of up to similar to 60. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:913 / 918
页数:6
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