Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

被引：1
|
作者：
Zhao, C.
Chen, Y. H.
Zhao, Man
Zhang, C. L.
Xu, B.
Yu, L. K.
Sun, J.
Lei, W.
Wang, Z. G.
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Beijing Inst Petrochem & Technol, Dept Math & Phys, Beijing 102617, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 1-3期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
Monte Carlo simulation; molecular beam epitaxy; kinetic effects; quantum dot;
D O I：
10.1016/j.mssp.2006.01.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：31 / 35
页数：5
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