Nanometer-scale current-voltage spectra measurement of resonant tunneling diodes using scanning force microscopy

被引：6
|
作者：
Tanimoto, M [1 ]
Kanisawa, K [1 ]
Shinohara, M [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 2B期
关键词：
scanning force microscopy; resonant tunneling diode; current-voltage spectra; negative difference resistance; quantized point contact; contact resistance; fine structure in spectra;
D O I：
10.1143/JJAP.35.1154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate that a novel method of current-voltage (I-V) spectra measurement by scanning force microscopy (SFM) reveals local electrical characteristics of resonant tunneling diodes (RTDs) on a nanometer scale. Measured SFM I-V spectra of RTDs show negative differential resistance features, and the spatial resolution of this method was found to be 20 nm. Experimental evidence for the quantized nature of an SFM pointcontact was observed for the Brst time. High spatial resolution of this method was confirmed by a simple calculation for the area of current flow through RTD. Fine structure in the SFM I-V spectra was also observed.
引用
收藏
页码：1154 / 1158
页数：5
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