Proximity phenomena in double-barrier structure NbZr/NbOx/Al/AlOy/NbZr

被引：1
|
作者：
Plecenik, A
Gazi, S
Zuzcak, M
Benacka, S
Shaternik, V
Rudenko, E
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia
[2] Natl Acad Sci Ukraine, Inst Met Phys, UA-252142 Kiev, Ukraine
来源：
LOW TEMPERATURE PHYSICS | 1999年 / 25卷 / 10期
关键词：
D O I：
10.1063/1.593822
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A tunneling structure NbZr/NbOx/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOx/Al junction and 4 to 6-nm-thick Al interlayer was prepared and studied experimentally. A proximity effect between NbZr and Al through NbOx barrier has been observed. An electrical voltage was generated in the NbOx barrier and a coexistence of the proximity effect and applied voltage in the junction NbZr/NbOx/Al has been observed. This experiment could be described on the basis of a model for coherent charge transport in superconducting/normal proximity structures. (C) 1999 American Institute of Physics. [S1063-777X(99)01310-9].
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页码：810 / 813
页数：4
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